Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device, capable of reading and writing data in just 400 picoseconds (a trillionth of a second). It became the fastest semiconductor charge storage device currently known to humanity and was published on the website of the journal Nature on Wednesday.
Today’s fastest memory is quick but loses data when powered off while flash memory saves data but is too slow for AI. Fudan scientists created a new memory that’s both fast and stable, using advanced materials to inject data at record speed.
The Fudan team are now exploring how to turn this lab breakthrough into a commercial product.
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Date: 2025-04-21 12:04 pm (UTC)Китай продолжает перегонять Запад и его микроэлектронную промышленность